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	<title>Spectral Emissivity &#38; Emittance &#187; Semiconductors</title>
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		<title>Table of Emissivities in Three Popular Spectral Regions</title>
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		<pubDate>Sat, 09 May 2009 07:28:31 +0000</pubDate>
		<dc:creator>grp</dc:creator>
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		<description><![CDATA[The Table of Emissivity on the INFRAPOINT Messtechnik GmbH website (Click here to visit) has summary data for a wide variety of materials broken down into three distinct spectral regions for the wavelength regions where the majority of infrared radiation thermometers and Infrared Thermal Imaging cameras operate. First and second are tables that deal with [...]]]></description>
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		<title>Handbook of OSML Libraries: Emittance</title>
		<link>http://www.spectralemissivity.com/sesl/handbook-of-osml-libraries-emittance</link>
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		<pubDate>Sat, 27 Dec 2008 01:01:30 +0000</pubDate>
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		<category><![CDATA[Theory]]></category>
		<category><![CDATA[cnrs]]></category>
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		<description><![CDATA[CRMHT &#8211; CNRS Centre de Recherche sur les Matériaux à Haute Température, Orléans, France Mesure indirecte de l&#8217;émittance (Includes sample data for Silicon Dioxide) Mesure de la réflectivité et de la transmissivité normales spectrales (10 à 40 000 cm-1 soit 1 000 à 0,25 µm). L&#8217;émissivité normale spectrale se déduit indirectement par calcul de ces [...]]]></description>
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		<title>ET10 Reflectometer Measures Emissivity</title>
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		<comments>http://www.spectralemissivity.com/general/et10-reflectometer-measures-emissivity#comments</comments>
		<pubDate>Fri, 21 Mar 2008 20:33:46 +0000</pubDate>
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		<category><![CDATA[Reflectivity]]></category>
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		<category><![CDATA[3-5 micrometer waveband]]></category>
		<category><![CDATA[8-12 micrometer waveband]]></category>
		<category><![CDATA[ET10]]></category>
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		<description><![CDATA[San Diego CA, USA &#8211;Surface Optics&#8217; ET10 measures emissivity values in two most commonly used spectral regions, 3 to 5 and 8 to 12 microns. Its main application is to produce emissivity values for the infrared cameras. Advanced IR cameras require the input of an emissivity value for accurate temperature calculations. The emissivity values obtained [...]]]></description>
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		<title>Polarized spectral emittance from periodic micromachined surfaces. II. Doped silicon: Angular variation</title>
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		<comments>http://www.spectralemissivity.com/sesl/polarized-spectral-emittance-from-periodic-micromachined-surfaces-ii-doped-silicon-angular-variation#comments</comments>
		<pubDate>Tue, 08 Jan 2008 04:15:16 +0000</pubDate>
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		<category><![CDATA[Semiconductors]]></category>
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		<category><![CDATA[3 to 14 micrometers]]></category>
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		<description><![CDATA[PJ Hesketh, JN Zemel, B Gebhart &#8211; Physical Review B, 1988 &#8211; APS Polarized spectral emittance from periodic micromachined surfaces. II. VOLUME 37, NUMBER 18 From the Abstract:The polarized directional spectral (3 um &#60;=lambda =&#62;14um) emittances (PDSE’s) of highly doped, micromachined, periodic structures on silicon were measured&#8230;]]></description>
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		<title>Polarized spectral emittance from periodic micromachined surfaces. I. Doped silicon: The normal direction</title>
		<link>http://www.spectralemissivity.com/sesl/polarized-spectral-emittance-from-periodic-micromachined-surfaces-i-doped-silicon-the-normal-direction</link>
		<comments>http://www.spectralemissivity.com/sesl/polarized-spectral-emittance-from-periodic-micromachined-surfaces-i-doped-silicon-the-normal-direction#comments</comments>
		<pubDate>Sun, 06 Jan 2008 04:17:49 +0000</pubDate>
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		<category><![CDATA[Semiconductors]]></category>
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		<description><![CDATA[Peter J. Hesketh, Jay N. Zemel &#38; Benjamin Gebhart ; Physical Review B.37.10795 VOLUME 37, NUMBER 18 1988 From the Abstract: The normal, polarized spectral (3 um &#60;=lambda =&#62;14um) emittances of highly doped, micromachined, periodic structures on heavily phosphorus-doped (110) silicon ([P]?5×1019 cm-3) were measured for &#8230;..]]></description>
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		<title>Traceable emissivity measurements in RTP using room temperature reflectometry</title>
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		<comments>http://www.spectralemissivity.com/ref/traceable-emissivity-measurements-in-rtp-using-room-temperature-reflectometry#comments</comments>
		<pubDate>Wed, 21 Nov 2007 15:22:32 +0000</pubDate>
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		<description><![CDATA[By: Hunter, A.; Adams, B.; Ramanujam, R. Advanced Thermal Processing of Semiconductors, 2003. RTP 2003. 11th IEEE International Conference on RTP Volume , Issue , 23-26 Sept. 2003 Page(s): 85 &#8211; 88 Digital Object Identifier 10.1109/RTP.2003.1249127 Summary: The design of an integrating reflectometer specific to the optical and spectral requirements of rapid thermal processing (RTP) [...]]]></description>
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		<title>Modeling and Simulation of Emissivity of Silicon-Related Materials and Structures</title>
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		<comments>http://www.spectralemissivity.com/sesl/modeling-and-simulation-of-emissivity-of-silicon-relatedmaterials-and-structures#comments</comments>
		<pubDate>Tue, 21 Aug 2007 14:09:28 +0000</pubDate>
		<dc:creator>grp</dc:creator>
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		<description><![CDATA[by N.M. RAVINDRA,(1,5) KRSHNA RAVINDRA,(1,2) SUNDARESH MAHENDRA,(1,3) BHUSHAN SOPORI,(4) and ANTHONY T. FIORY(1) 1.—Department of Physics, New Jersey Institute of Technology, Newark, NJ 07102. 2.—Intern atNJIT from Union County Magnet High School, Scotch Plains, NJ 07076. 3.—Intern at NJIT fromMillburn High School, Millburn, NJ 07041. 4.—National Renewable Energy Laboratory, Golden, CO 80401. Journal of ELECTRONIC [...]]]></description>
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		<title>&#8220;SPECTRAL EMISSIVITY OF HIGHLY DOPED SILICON&#8221;</title>
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		<comments>http://www.spectralemissivity.com/sesl/spectral-emissivity-of-highly-doped-silicon#comments</comments>
		<pubDate>Tue, 21 Aug 2007 14:00:28 +0000</pubDate>
		<dc:creator>grp</dc:creator>
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		<description><![CDATA[by Curt H. Liebert and Ralph D. Thomas, NASA Lewis Research Center (Downloadable PDF File), APRIL 1968. SUMMARY &#8220;Measurements were made at temperatures of 300°, 882&#8242;, and 1074&#8242; K of the normal was doped with a r s e n i c spectral emissivity of opaque, highly doped silicon. The silicon and boron to electron [...]]]></description>
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		<title>&#8220;Emissivity of silicon at elevated temperatures&#8221;</title>
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		<comments>http://www.spectralemissivity.com/sesl/emissivity-of-silicon-at-elevated-temperatures#comments</comments>
		<pubDate>Tue, 21 Aug 2007 13:33:03 +0000</pubDate>
		<dc:creator>grp</dc:creator>
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		<description><![CDATA[By P. J. Timans , Microelectronics Research Centre, Cavendish Laboratory, Cambridge University, Madingley Road, Cambridge CB3 0HE, United Kingdom Journal of Applied Physics &#8212; November 15, 1993 &#8212; Volume 74, Issue 10, pp. 6353-6364]]></description>
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