From the category archives:

Semiconductors

Table of Emissivities in Three Popular Spectral Regions

May 9, 2009

The Table of Emissivity on the INFRAPOINT Messtechnik GmbH website (Click here to visit) has summary data for a wide variety of materials broken down into three distinct spectral regions for the wavelength regions where the majority of infrared radiation thermometers and Infrared Thermal Imaging cameras operate. First and second are tables that deal with [...]

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Handbook of OSML Libraries: Emittance

December 26, 2008

CRMHT – CNRS Centre de Recherche sur les Matériaux à Haute Température, Orléans, France Mesure indirecte de l’émittance (Includes sample data for Silicon Dioxide) Mesure de la réflectivité et de la transmissivité normales spectrales (10 à 40 000 cm-1 soit 1 000 à 0,25 µm). L’émissivité normale spectrale se déduit indirectement par calcul de ces [...]

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ET10 Reflectometer Measures Emissivity

March 21, 2008

San Diego CA, USA –Surface Optics’ ET10 measures emissivity values in two most commonly used spectral regions, 3 to 5 and 8 to 12 microns. Its main application is to produce emissivity values for the infrared cameras. Advanced IR cameras require the input of an emissivity value for accurate temperature calculations. The emissivity values obtained [...]

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Polarized spectral emittance from periodic micromachined surfaces. II. Doped silicon: Angular variation

January 8, 2008

PJ Hesketh, JN Zemel, B Gebhart – Physical Review B, 1988 – APS Polarized spectral emittance from periodic micromachined surfaces. II. VOLUME 37, NUMBER 18 From the Abstract:The polarized directional spectral (3 um <=lambda =>14um) emittances (PDSE’s) of highly doped, micromachined, periodic structures on silicon were measured…

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Polarized spectral emittance from periodic micromachined surfaces. I. Doped silicon: The normal direction

January 6, 2008

Peter J. Hesketh, Jay N. Zemel & Benjamin Gebhart ; Physical Review B.37.10795 VOLUME 37, NUMBER 18 1988 From the Abstract: The normal, polarized spectral (3 um <=lambda =>14um) emittances of highly doped, micromachined, periodic structures on heavily phosphorus-doped (110) silicon ([P]?5×1019 cm-3) were measured for …..

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Traceable emissivity measurements in RTP using room temperature reflectometry

November 21, 2007

By: Hunter, A.; Adams, B.; Ramanujam, R. Advanced Thermal Processing of Semiconductors, 2003. RTP 2003. 11th IEEE International Conference on RTP Volume , Issue , 23-26 Sept. 2003 Page(s): 85 – 88 Digital Object Identifier 10.1109/RTP.2003.1249127 Summary: The design of an integrating reflectometer specific to the optical and spectral requirements of rapid thermal processing (RTP) [...]

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Modeling and Simulation of Emissivity of Silicon-Related Materials and Structures

August 21, 2007

by N.M. RAVINDRA,(1,5) KRSHNA RAVINDRA,(1,2) SUNDARESH MAHENDRA,(1,3) BHUSHAN SOPORI,(4) and ANTHONY T. FIORY(1) 1.—Department of Physics, New Jersey Institute of Technology, Newark, NJ 07102. 2.—Intern atNJIT from Union County Magnet High School, Scotch Plains, NJ 07076. 3.—Intern at NJIT fromMillburn High School, Millburn, NJ 07041. 4.—National Renewable Energy Laboratory, Golden, CO 80401. Journal of ELECTRONIC [...]

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“SPECTRAL EMISSIVITY OF HIGHLY DOPED SILICON”

August 21, 2007

by Curt H. Liebert and Ralph D. Thomas, NASA Lewis Research Center (Downloadable PDF File), APRIL 1968. SUMMARY “Measurements were made at temperatures of 300°, 882′, and 1074′ K of the normal was doped with a r s e n i c spectral emissivity of opaque, highly doped silicon. The silicon and boron to electron [...]

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“Emissivity of silicon at elevated temperatures”

August 21, 2007

By P. J. Timans , Microelectronics Research Centre, Cavendish Laboratory, Cambridge University, Madingley Road, Cambridge CB3 0HE, United Kingdom Journal of Applied Physics — November 15, 1993 — Volume 74, Issue 10, pp. 6353-6364

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